半导体器件物理习题与参考文献

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于太阳光谱的百分之五十,平均吸收系数为500cm,在背面接触处的反射系数为0.8,电池的厚度为10?m。

7-10.考虑一个硅PN结太阳电池,其面积为2cm。若太阳电池掺杂为

1619?3Na?1.7?10cm?3N,d??510cm,且已知?n?10?s,?p?0.5?s,

2?1Dn?9.3cm2/s,Dp?2.5cm2/s及IL?95mA。在室温下:

(1)计算并画出太阳电池的I-V特性曲线; (2)计算开路电压;

(3)确定太阳电池的最大输出功率; (4)计算机解(1)—(3)。

7-11.试列光电二极管和太阳电池的三个主要差别。 参考文献

1. P.Rappaport and J.J.Wysocki, The Photovoltaic Effect in GaAs, CdS and Other Compound Semiconductors, Acta Electron, 5:364(1961).

2. E.S.Rittner, An Improved Theory of the Silicon p-n Junction Solar Cell,

Int.Electron.Devices Meet., Washington, December 1976, Tech.Dig., pp.69-70. 3. M.Wolf, Limitations and Possibilities for Improvements of Photovoltaic Solar Energy

Converters, Proc.IRE, 48:1246(1960).

4. J.I.Pankove, “Optical Processes in Semiconductors,” Prentice-Hall, Englewood Cliffs,

N.J., 1971. 5. Hovel, H.J.:“Solar Cells, Semiconductors and Semimetals.” Vol.11.Academic, New

York, 1975.

6. Merrigan, J.A.:“Sunlight to Electricity,” MIT Press Cambridge.Mass.,

1975. H.C.Card and E.S.Yang, MIS-Schottky Theory under Conditions of Optical Carrier Generation in Solar Cells, Appl.Phys.Lett., 29:51(1976). 7. Carlson, D.E.“Amorphous Silicon Solar Cells.” IEEE Transactions on Electron Devices

ED-24(April 1977), pp.449-53.

8. Fonash, S.J.Solar Cell Device Physics.New York: Academic Press, 1981.

9. Kressel, H.Semiconductor Devices for Optical Communications: Topics in Applied

Physics. Vol.39.New York: Springer-Verlag, 1987. 10. MacMillan, H.F., H.C.Hamaker, G.F.Virshup, and J.G.Werthen.“Multijunction

11. 12. 13.

14.

15. Shur, M.Physics of Semiconductor Devices.Englewood Cliffs, NJ: Prentice H

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